STMicroelectronics expands 800 VDC AI datacenter power conversion portfolio with new 12V and 6V architectures in collaboration with Nvidia.

STMicroelectronics has expanded its 800 VDC AI datacenter power conversion portfolio with new 12V and 6V architectures developed in collaboration with NVIDIA. According to Marco Cassis, President, Analog, Power & Discrete, MEMS and Sensors Group Head of STMicroelectronics' Strategy, System Research and Applications, Innovation Office, "As AI infrastructure compute scale continues to expand fast, it requires higher voltage distribution and greater density, which can only be achieved with system-level innovation for each of the different AI server form factors." Cassis added that "with these new converters for 800 VDC power distribution, ST brings a complete set of solutions to support the deployment of gigawatt-scale compute infrastructure with more efficient, scalable, and sustainable power architectures."

The expansion reflects the industry's move toward different server architectures that require distinct power delivery topologies depending on GPU generation, server height, form factor, and thermal envelope for large-scale training clusters, inference farms, and high-density AI infrastructures. The 50V, 12V, and 6V intermediate DC buses will all coexist in AI data centers depending on rack density, GPU configuration, and cooling strategy.

The new 800 VDC to 12V converter enables high-efficiency distribution from rack-level power shelves directly to the voltage domains that feed advanced AI accelerators. The new 800 VDC to 6V path allows OEMs to reduce the number of conversion stages and move the 6V bus closer to the GPU, which reduces copper usage, minimizes resistive losses, and improves transient performance—a critical differentiator for large-scale training clusters.

In October 2025, STMicroelectronics introduced a fully integrated prototype power-delivery system showcasing a compact GaN-based LLC converter operating directly from 800 V at 1 MHz with over 98% efficiency and exceptional power density in a smartphone-sized footprint exceeding 2,600 W/in³ at 50 V. The three solutions combine ST technologies across power semiconductors including silicon, SiC, and GaN, along with analog and mixed-signal capabilities and microcontrollers.