Samsung and Broadcom ink $200 billion deal to supply AI infrastructure chips and optical interconnects for data centers.

Samsung and Broadcom have announced a strategic partnership expected to exceed $200 billion in value over the next five years, focused on expanding collaboration in advanced memory and semiconductor manufacturing to support next-generation AI infrastructure. The memorandum of understanding was signed during the AI Summit held at The Midway in San Francisco on July 24, 2026, with attendance from Broadcom President and CEO Hock Tan, Samsung Foundry President and Head Jinman Han, senior executives from both firms, and representatives of the Korean government.

Under the agreement, Samsung will supply Broadcom with advanced memory solutions, including HBM, for the latter's next-generation AI accelerators. The companies will also deepen their collaboration in Samsung's foundry business, with Broadcom planning to use Samsung's 2nm and below processes to manufacture products, including Wireless Broadband Communications (WBC) solutions.

The partnership additionally encompasses cutting-edge packaging technologies built on a 2nm process, including 2.3D and 2.5D integration. These advanced packaging techniques are designed to improve performance while reducing power consumption in AI and networking silicon.

"AI is driving unprecedented demand for tightly integrated semiconductor technologies spanning memory, logic and advanced packaging," said Young Hyun Jun, Vice Chairman & CEO of the DS Division at Samsung Electronics. "By expanding our collaboration with Broadcom across these critical technologies, we look forward to delivering greater value to customers while advancing the AI infrastructure of the future."

Samsung is positioned to report record-breaking quarterly earnings this quarter, with the company estimating that its operating profit for Q2 2026 increased approximately 19 times year-over-year, primarily driven by continued strong demand for AI memory chips and their higher price points.